View MRF8S9170NR310_4667935.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mrf8s9170nr3 1 rf device data freescale semiconductor rf power field effect transistor n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1000 ma, p out = 50 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 920 mhz 19.3 36.5 6.0 --36.6 940 mhz 19.1 36.1 6.1 --36.7 960 mhz 18.9 36.0 6.0 --36.1 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 250 watts cw output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 177 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 78 c, 50 w cw, 28 vdc, i dq = 1000 ma case temperature 82 c, 170 w cw, 28 vdc, i dq = 1000 ma r jc 0.38 0.33 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9170n rev. 1, 5/2010 freescale semiconductor technical data 920--960 mhz, 50 w avg., 28 v single w--cdma lateral n--channel rf power mosfet case 2021--03, style 1 o m -- 7 8 0 -- 2 mrf8s9170nr3 ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf8s9170nr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 355 adc) v gs(th) 1.5 2.3 3 vdc gate quiescent voltage (v dd =28vdc,i d = 1000 madc, measured in functional test) v gs(q) 2.3 3.1 3.8 vdc drain--source on--voltage (v gs =10vdc,i d =2.9adc) v ds(on) 0.1 0.19 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1000 ma, p out = 50 w avg., f = 920 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 18.0 19.3 21.0 db drain efficiency d 34.0 36.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.5 6.0 ? db adjacent channel power ratio acpr ? --36.6 --34.5 dbc input return loss irl ? -- 1 0 -- 7 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1000 ma, p out =50wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.3 36.5 6.0 --36.6 -- 1 0 940 mhz 19.1 36.1 6.1 --36.7 -- 1 2 960 mhz 18.9 36.0 6.0 --36.1 -- 1 6 1. part internally matched both on input and output. (continued)
mrf8s9170nr3 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1000 ma, 920--960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 177 ? w imd symmetry @ 160 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 17 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz gain flatness in 40 mhz bandwidth @ p out =50wavg. g f ? 0.32 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.01 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.01 ? dbm/ c
4 rf device data freescale semiconductor mrf8s9170nr3 figure 1. mrf8s9170nr3 test circuit component layout cut out area mrf8s9170n rev. 0 r1 c5 b1 c6 c7 c8 c4 r2 c2 c1* c3 c19 c21 c23 c25 c27 c10 c16 c17* c15 c9 c12 c14 c11 c13 c18 c20 c22 c24 c26 c28 *c1 and c17 are mounted vertically. table 6. mrf8s9170nr3 test circuit c omponent designations and values part description part number manufacturer b1 short ferrite bead 2743019447 fair--rite c1, c8, c17, c18, c19, c20, c21 39 pf chip capacitors atc100b390jt500xt atc c2 2.0 pf chip capacitor atc100b2r0bt500xt atc c3, c4 3.3 pf chip capacitors atc100b3r3ct500xt atc c5 100 f, 50 v electrolytic capacitor 476kxm063m illinois cap c6 3.3. f, 100 v chip capacitor c4532jb1h335kt tdk c7, c22, c23 0.1 f chip capacitors c3216x7r2e104kt tdk c9, c10 6.8 pf chip capacitors atc100b6r8ct500xt atc c11, c12 6.2 pf chip capacitors atc100b6r2bt500xt atc c13, c14 5.6 pf chip capacitors atc100b5r6ct500xt atc c15 4.7 pf chip capacitor atc100b4r7ct500xt atc c16 2.2 pf chip capacitor atc100b2r2jt500xt atc c24, c25, c26, c27 22 f, 50 v chip capacitors c5750jf1h226zt tdk c28 470 f, 63 v electrolytic capacitor kme63vb471m12x25ll chemi--con r1 2k ? , 1/4 w chip resistor crcw12062k00fkea vishay r2 5.1 ? , 1/4 w chip resistor crcw12065r10fkea vishay pcb 0.030 , r =3.5 rf--35 taconic
mrf8s9170nr3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 820 irl g ps acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. 0 -- 5 -- 1 5 18.4 20 19.8 19.6 -- 3 7 44 42 40 36 -- 2 7 -- 2 9 d , drain efficiency (%) d g ps , power gain (db) 19.4 19.2 19 18.8 18.6 840 860 880 900 920 940 960 980 38 -- 3 1 -- 2 0 parc parc (db) -- 1 . 5 -- 2 -- 2 . 5 -- 3 -- 4 acpr (dbc) figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 5 -- 5 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--u v dd =28vdc,p out = 160 w (pep), i dq = 1000 ma two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 40 0 -- 2 output compression at 0.01% probability on ccdf (db) 20 60 80 160 20 80 50 40 30 d , drain efficiency (%) d acpr parc acpr (dbc) -- 4 5 -- 1 5 -- 2 0 -- 3 0 -- 2 5 -- 3 5 21 g ps , power gain (db) 19 20 18 17 15 g ps input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf --2db=58.4w --3db=79.1w v dd =28vdc,p out =50w(avg.),i dq = 1000 ma single--carrier w--cdma, 3.85 mhz channel bandwidth -- 6 0 -- 1 0 -- 1 5 -- 2 5 -- 3 5 -- 4 5 -- 5 5 im7--l 18.2 18 -- 3 3 -- 3 5 -- 1 0 -- 3 . 5 16 -- 4 100 120 140 -- 4 0 70 60 -- 1 d b = 4 0 w v dd =28vdc,i dq = 1000 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf
6 rf device data freescale semiconductor mrf8s9170nr3 typical characteristics g ps acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 2 5 12 24 10 70 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 22 100 200 -- 5 0 acpr (dbc) 20 -- 2 0 -- 3 0 -- 3 5 figure 6. broadband frequency response -- 8 24 600 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1000 ma 12 8 gain (db) 20 gain 800 1000 1200 irl -- 4 0 0 -- 1 5 -- 2 0 -- 2 5 -- 3 0 irl (db) -- 4 -- 3 5 f = 920 mhz v dd =28vdc,i dq = 1000 ma single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probab ility on ccdf 18 16 60 -- 4 5 -- 4 0 940 mhz 0 16 -- 1 0 -- 5 14 10 960 mhz 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 4 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
mrf8s9170nr3 7 rf device data freescale semiconductor v dd =28vdc,i dq = 1000 ma, p out =50wavg. f mhz z source ? z load ? 820 2.34 -- j3.90 2.08 -- j1.11 840 2.51 -- j3.75 2.07 -- j1.05 860 2.54 -- j3.77 2.01 -- j1.09 880 2.37 -- j3.71 1.81 -- j1.11 900 2.26 -- j3.50 1.58 -- j1.02 920 2.27 -- j3.33 1.43 -- j0.89 940 2.28 -- j3.26 1.27 -- j0.77 960 2.24 -- j3.19 1.10 -- j0.64 980 2.21 -- j3.10 0.94 -- j0.47 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf8s9170nr3 alternative peak tune load pull characteristics 36 p in , input power (dbm) v dd =28vdc,i dq = 909 ma, pulsed cw, 10 sec(on), 10% duty cycle 55 54 53 actual ideal 50 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 56 57 58 34 38 31 f = 960 mhz 37 f = 940 mhz f = 920 mhz 51 52 35 32 33 30 f = 920 mhz f = 940 mhz f (mhz) p1db p3db watts dbm watts dbm 920 229 53.6 285 54.6 940 217 53.6 269.2 54.3 960 205 53.1 259 54.1 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 4.6 -- j2.8 0.8 -- j1.6 940 p1db 4.7 -- j2.1 0.8 -- j1.6 960 p1db 5.2 -- j3.4 1.0 -- j1.7 figure 10. pulsed cw output power versus input power @ 28 v
mrf8s9170nr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor mrf8s9170nr3
mrf8s9170nr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor mrf8s9170nr3 product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2009 ? initial release of data sheet 1 may 2010 ? replaced case outline 2021--02, issue a, with 2021--03, issue b, p. 1, 9--11. added 4 exposed source tabs at dimension e1 on sheets 1 and 2. added dimension e1 0.721 --0.729 (18.31--18.52 mm) in the table, revised d1 minimum dimension from 0.730 (18.54 mm) to 0.720 (18.29 mm), revised dimension e2 from 0.312 (7.92 mm) to 0.306 (7.77 mm), and revised wording of note 8 on sheet 3. ? changed human body model esd rating from class 1c to class 2 to reflect recent esd test results of the device, p. 2
mrf8s9170nr3 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s9170n rev. 1, 5/2010

▲Up To Search▲

Price & Availability of MRF8S9170NR310

	To Download MRF8S9170NR310 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .